NH4 Be2 BO3 F2 and γ-Be2 BO3 F: Overcoming the Layering Habit in KBe2 BO3 F2 for the Next-Generation Deep-Ultraviolet Nonlinear Optical Materials-Reference-Cited by-同舟云学术

NH4 Be2 BO3 F2 and γ-Be2 BO3 F: Overcoming the Layering Habit in KBe2 BO3 F2 for the Next-Generation Deep-Ultraviolet Nonlinear Optical Materials

Published:2018-06-14 Issue:29 Volume:57 Page:8968-8972
ISSN:1433-7851
Container-title:Angewandte Chemie International Edition
language:en
Short-container-title:Angew. Chem. Int. Ed.

Author:

Peng Guang¹²,Ye Ning¹^ORCID,Lin Zheshuai³,Kang Lei³,Pan Shilie⁴,Zhang Min⁴,Lin Chensheng¹,Long Xifa¹,Luo Min¹,Chen Yu¹,Tang Yu-Huan¹²,Xu Feng¹²,Yan Tao¹

Affiliation:

1. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Collaborative Innovation Center for Optoelectronic, Semiconductors and Efficient Devices; Fujian Institute of Research on the Structure of Matter; Chinese Academy of Sciences; Fuzhou Fujian 350002 China

2. University of the Chinese Academy of Sciences; Beijing 100049 China

3. Beijing Center for Crystal R&D; Key Lab of Functional Crystals and Laser Technology of; Chinese Academy of Sciences; Technical Institute of Physics and Chemistry; Chinese Academy of Sciences; Beijing 100190 China

4. Xinjiang Key Laboratory of Electronic Information Materials and Devices; Xinjiang Technical Institute of Physics & Chemistry; Chinese Academy of Sciences; 40-1 South Beijing Road Urumqi 830011 China

Funder

National Natural Science Foundation of China

National Key Research and Development Plan of Ministry of Science and Technology

Strategic Priority Research Program of the Chinese Academy of Sciences

Publisher

Wiley

Subject

General Chemistry,Catalysis

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/anie.201803721/fullpdf

Reference44 articles.

1. Materials science: China's crystal cache