Intrinsic Correlation between Electronic Structure and Degradation: From Few‐Layer to Bulk Black Phosphorus-Reference-Cited by-同舟云学术

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Intrinsic Correlation between Electronic Structure and Degradation: From Few‐Layer to Bulk Black Phosphorus

Published:2019-03-18 Issue:12 Volume:58 Page:3754-3758
ISSN:1433-7851
Container-title:Angewandte Chemie International Edition
language:en
Short-container-title:Angew. Chem. Int. Ed.

Author:

Kim Minju¹,Kim Han‐gyu¹,Park Soohyung²,Kim Jin Sung¹,Choi Hyoung Joon¹,Im Seongil¹,Lee Hyunbok³,Kim Taekyeong⁴,Yi Yeonjin¹^ORCID

Affiliation:

1. Institute of Physics and Applied PhysicsYonsei University 50 Yonsei-ro, Seodaemun-Gu Seoul Republic of Korea

2. Institut für Physik and IRIS AdlershofHumboldt-Universität zu Berlin Brook-Taylor Straße 6 Berlin Germany

3. Department of PhysicsKangwon National University 1 Gangwondaehak-gil, Chuncheon-si Gangwon-do Republic of Korea

4. Department of PhysicsHankuk University of Foreign Studies 81 Oedae-ro, Chein-gu, Yongin-si Gyeonggi-do Republic of Korea

Funder

National Research Foundation of Korea

Hankuk University of Foreign Studies

Samsung

Publisher

Wiley

Subject

General Chemistry,Catalysis

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/anie.201811743

Reference38 articles.

1. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

2. Black phosphorus field-effect transistors

3. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

4. The renaissance of black phosphorus

5. Direct observation of the layer-dependent electronic structure in phosphorene

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