The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors

Author:

Chen Jiafeng1,Han Yulei2,Kong Xianghua3,Deng Xinzhou2,Park Hyo Ju4,Guo Yali1,Jin Song1,Qi Zhikai1,Lee Zonghoon45,Qiao Zhenhua2,Ruoff Rodney S.45,Ji Hengxing1ORCID

Affiliation:

1. Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion; iChEM (Collaborative Innovation Center of Chemistry for Energy Materials); University of Science and Technology of China; Hefei, Anhui 230026 China

2. ICQD, Hefei National Laboratory for Physical Sciences at Microscale; Synergetic Innovation Center of Quantum Information and Quantum Physics; CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics; University of Science and Technology of China; Hefei, Anhui 230026 China

3. School of Chemistry and Chemical Engineering; Hefei University of Technology; Hefei, Anhui 230009 China

4. School of Materials Science and Engineering; Ulsan National Institute of Science and Technology (UNIST); Ulsan 44919 Republic of Korea

5. Center for Multidimensional Carbon Materials; Institute for Basic Science Center at UNIST Campus; Ulsan 44919 Republic of Korea

Publisher

Wiley

Subject

General Chemistry,Catalysis

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