Design of a high‐efficiency bandwidth‐enhanced power amplifier based on dual‐paths impedance matching techniques

Author:

Xuan Xuefei12ORCID,Cheng Zhiqun1,Zhang Zhiwei1ORCID,Gong Tingwei1,Liu Guohua1,Le Chao1

Affiliation:

1. Key Laboratory of RF Circuit and System of Ministry of Education Hangzhou Dianzi University Hangzhou China

2. School of Electronic Engineering Huainan Normal University Huainan China

Abstract

SummaryIn this brief, we propose a bandwidth‐enhanced dual‐paths impedance matching technique that can effectively match the four preset design frequency points in the operating frequency band to the optimal impedance region provided by a series of inverse continuous modes (SICMs), thus realizing the bandwidth expansion and efficiency improvement of the power amplifier (PA). To verify the proposed design theory, a multi‐octave PA component was designed, fabricated, and measured with a 10‐W GaN HEMT device. The implemented PA exhibits superior performance, with a relative bandwidth of 142.9% in the bandwidth range of 0.55–3.3 GHz. Moreover, the 39.1–42 dBm output power, 60.1%–76.2% drain efficiency (DE), and 9.1–12 dB gain are also achieved in the target band. Based on the simulated and measured results, the effectiveness of the proposed design theory is further confirmed.

Funder

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

National Science and Technology Major Project

Natural Science Foundation of Zhejiang Province

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

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