Affiliation:
1. Key Laboratory of RF Circuit and System of Ministry of Education Hangzhou Dianzi University Hangzhou China
2. School of Electronic Engineering Huainan Normal University Huainan China
Abstract
SummaryIn this brief, we propose a bandwidth‐enhanced dual‐paths impedance matching technique that can effectively match the four preset design frequency points in the operating frequency band to the optimal impedance region provided by a series of inverse continuous modes (SICMs), thus realizing the bandwidth expansion and efficiency improvement of the power amplifier (PA). To verify the proposed design theory, a multi‐octave PA component was designed, fabricated, and measured with a 10‐W GaN HEMT device. The implemented PA exhibits superior performance, with a relative bandwidth of 142.9% in the bandwidth range of 0.55–3.3 GHz. Moreover, the 39.1–42 dBm output power, 60.1%–76.2% drain efficiency (DE), and 9.1–12 dB gain are also achieved in the target band. Based on the simulated and measured results, the effectiveness of the proposed design theory is further confirmed.
Funder
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
National Science and Technology Major Project
Natural Science Foundation of Zhejiang Province
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials