Investigation on the surface flashover of high gain SI-GaAs PCSS-Reference-Cited by-同舟云学术

Investigation on the surface flashover of high gain SI-GaAs PCSS

Published:2018-04-24 Issue:6 Volume:60 Page:1439-1445
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Ji Weili¹^ORCID,Shi Wei¹,Ma Cheng¹,Cao Juncheng²¹

Affiliation:

1. Research Center for Ultrafast Photoelectric Technology, Xi'an University of Technology; Xi'an 710048 China

2. Key Laboratory of Terahertz Solid-State Technology; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences; Shanghai 200050 China

Funder

National Basic Research Program of China (973 Program)

National Natural Science Foundation of China

Shaanxi Key Science and Technology Innovation Team

Shanxi province ministry of education

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Ultra-wideband source using gallium arsenide photoconductive semiconductor switches;Schoenberg;IEEE Trans Plasma Sci.,1997

2. Investigation of ultra-wide band electromagnetic radiation based on SI-GaAs photoconductive switches;Wei;Microw Opt Technol Lett.,2012

3. Critical component requirements for compact pulsepower system architectures;Nunnally;IEEE Trans Plasma Sci.,2005

4. Analysis of highvoltage operation of gallium arsenide photoconductive switches usedin high power applications;Islam;J Appl Phys.,1999

5. Triggering GaAslock-on switches with laser diode array;Loubriel;IEEE Trans Electron Devices.,1991

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