Progress and prospects in low‐dimensional multiferroic materials-Reference-Cited by-同舟云学术

Progress and prospects in low‐dimensional multiferroic materials

Published:2019-01-15 Issue:5 Volume:9 Page:
ISSN:1759-0876
Container-title:WIREs Computational Molecular Science
language:en
Short-container-title:WIREs Comput Mol Sci

Author:

Hu Ting¹,Kan Erjun¹^ORCID

Affiliation:

1. Department of Applied Physics and Institution of Energy and Microstructure Nanjing University of Science and Technology Nanjing People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Computational Mathematics,Physical and Theoretical Chemistry,Computer Science Applications,Biochemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/wcms.1409

Reference92 articles.

1. Multi-ferroic magnetoelectrics

2. Towards a magnetoelectric memory

3. Magnetoelectric Switching of Exchange Bias

4. New ferroelectric material for embedded FRAM LSIs;Maruyama K;Fujitsu Sci Tech J,2007

5. Physics of thin-film ferroelectric oxides

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