Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers-Reference-Cited by-同舟云学术

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Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

Published:2020-09-23 Issue:3 Volume:63 Page:993-1001
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Al‐Shatravi Ali Gehad¹,Abdullah Muaffak²,Al‐Khursan Amin Habbeb²^ORCID

Affiliation:

1. Physics Department, Science College Thi‐Qar University Nassiriyah Iraq

2. Nassiriya Nanotechnology Research Laboratory (NNRL), Science College Thi‐Qar University Nassiriyah Iraq

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.32671

Reference31 articles.

1. Numerical Analysis of Gain Saturation, Noise Figure, and Carrier Distribution for Quantum-Dot Semiconductor-Optical Amplifiers

2. Four-wave mixing in quantum dot SOAs: Theory of carrier heating

3. III-Nitride QD Lasers

4. Theory of four-wave mixing in quantum dot semiconductor optical amplifiers

5. Optical gain of strained wurtzite GaN quantum-well lasers

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