The First MOSFET Design by J. Lilienfeld and its Long Journey to Implementation-Reference-Cited by-同舟云学术

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The First MOSFET Design by J. Lilienfeld and its Long Journey to Implementation

Published:2023-07-03 Issue: Volume: Page:65-88
ISSN:
Container-title:75th Anniversary of the Transistor
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Author:

Iwai Hiroshi

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/9781394202478.ch7

Reference148 articles.

1. Lilienfeld J.E.(1926).Method and apparatus for controlling electric current. US Patent 1 745 175 filed 8 October 1926 (priority CA272437TA·1925‐10‐22).

2. SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

3. Lilienfeld J.E.(1928).Device for controlling electric current. US Patent 1 900 018 filed 28 March 1928.

4. Julius E. Lillienfeld

5. Invention of the solid‐state amplifier

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1. Development of RFCMOS Technologies in the 1990s in Toshiba;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

2. My LSI Development Experience at Toshiba (1973–1999): Hard Working, Exciting, and Splendid Days;IEEE Electron Devices Magazine;2023-06

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