1. Dennard R.H.(1968).USP‐3387286(4 June 1968).
2. Design of ion-implanted MOSFET's with very small physical dimensions
3. Marvels of microelectronic technology: the 1T‐1C dynamic random access memory, from a groundbreaking idea to a business benchmark;Deleonibus S.;IEEE Electron Devices Soc. Newsl.,2019
4. Japanese patent application;Koyanagi M.;Tokugansho,1976
5. Koyanagi M.andSato K.(1977).USP‐4151607(5 January 1977).