Interfacial Engineering for Fabricating High-Performance Field-Effect Transistors Based on 2D Materials
Author:
Affiliation:
1. Key Lab of Microsystem and Microstructure of Ministry of Education; Harbin Institute of Technology; No. 2 YiKuang Street Harbin 150080 China
2. School of Materials Science and Engineering; Harbin Institute of Technology; Harbin 150080 P. R. China
Funder
National Natural Science Foundation of China
Newton Mobility Grant
Royal Society and NFSC
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
Publisher
Wiley
Subject
General Materials Science,General Chemistry
Reference83 articles.
1. The chips are down for Moore’s law
2. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
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