K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique

Author:

Son Hyeon Jin1ORCID,Shin Dong‐Jun2ORCID,Choi Ui‐Gyu1ORCID,Yang Jong‐Ryul1ORCID

Affiliation:

1. Department of Electrical and Electronics Engineering Konkuk University Seoul Republic of Korea

2. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea

Abstract

AbstractA complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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