CdS/Cu(In,Ga)S2based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process-Reference-Cited by-同舟云学术

CdS/Cu(In,Ga)S2based solar cells with efficiencies reaching 12.9% prepared by a rapid thermal process

Published:2012-02-17 Issue:1 Volume:21 Page:88-93
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Merdes S.¹,Abou-Ras D.¹,Mainz R.¹,Klenk R.¹,Lux-Steiner M. Ch.¹,Meeder A.²,Schock H. W.¹,Klaer J.¹

Affiliation:

1. Helmholtz-Zentrum-Berlin für Materialien und Energie; Hahn-Meitner-Platz 1; D14109; Berlin; Germany

2. Soltecture Solartechnik GmbH; Groß-Berliner Damm 149; D12487; Berlin; Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference20 articles.

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3. Improved efficiency of CuInS2-based solar cells without potassium cyanide process;Watanabe;Japanese Journal of Applied Physics,1999

4. Jahagirdar AH Kadam AA Dhere NG Role of i-ZnO in optimizing open circuit voltage of CIGS 2 and CIGS thin film solar cells Waikoloa 2006 557 559

5. 12.6% efficient CdS/Cu(In,Ga)S2 based solar cell with an open circuit voltage of 879 mV prepared by a rapid thermal process;Merdes;Solar Energy Materials and Solar Cells,2011

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