Affiliation:
1. Microelectronics Department, State Key Laboratory of ASIC and System Fudan University Shanghai China
2. Microwave Engineering Department, High Power Microwave Laboratory Northwest Institute of Nuclear Technology Shaanxi China
Abstract
AbstractIn this paper, a millimeter‐wave broadband high‐efficiency power amplifier (PA) for Ka‐band (26–32 GHz) using 0.15‐μm GaAs pseudomorphic high‐electron‐mobility transistor process is proposed. The PA utilizes a three‐stage cascade structure and adopts an RC series feedback network, which expands the bandwidth and ensures the circuit stability. To improve the output power and efficiency of the circuit, a tree‐like transistor structure is proposed. The power amplifier, it can provide 23.6 dBm output P1dB with 33.1% power‐added efficiency at 28 GHz with high linearity. The maximum small signal gain can reach 27 dB with 3‐dB bandwidth from 24 to 33 GHz for the measured results.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials