Affiliation:
1. College of Chemistry Fuzhou University Fuzhou Fujian 350116 China
2. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou Fujian 350002 China
Abstract
Comprehensive SummaryOptical controlling of solid‐sate electric properties is emerging as a non‐contact and nondestructive avenue to optimize the physical properties of electronic and optoelectronic devices. In term of strong light‐material coupling, two‐dimensional (2D) double perovskites hold great prospects to create photo‐dielectric activities for high‐performance device applications. Here, we have achieved the photo‐excited switching and enhancement of dielectric properties in the orientational thin films of a 2D double perovskite, (C4H12N)4AgBiI8 (1, where C4H9NH3+ is isobutylammonium). It undergoes a structural phase transition at 384 K (Tc), triggered by the dynamic ordering of organic cations and tilting motion of isometallic perovskite sheets. Most notably, the orientational thin films of 1 are extremely sensitive to light illumination, of which the dielectric constants can be facilely photo‐switched between the low‐ and high‐states. During this photo‐switching process, the dielectric constants are enhanced with a magnitude up to ~350% under 405 nm, far beyond most of the inorganic phase transition counterparts. In addition, this photo‐excited switching and enhancement of dielectric response exhibits an operational stability with superior anti‐fatigue characteristics. Our work opens up a potential avenue for assembling high‐performance optoelectronic devices with the controllable physical properties.
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Natural Science Foundation of Fujian Province