Atomistic Insights into Oxidation of Chemical Passivated Silicon (100) Surface: Reactive Molecular Dynamic Simulations
Author:
Affiliation:
1. Key Lab of Colloid and Interface Chemistry, Shandong University Jinan Shandong 250100 China
Publisher
Wiley
Subject
General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/cjoc.202000476
Reference61 articles.
1. The central image of a gravitationally lensed quasar
2. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
3. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
4. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
5. Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires
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