A-193 (dBc/Hz) FoM and −126 (dBc/Hz) phase noise octagonal ring oscillator using pulse injection technique
Author:
Affiliation:
1. Electrical Engineering Department; Assiut University; 71715 Egypt
2. E-JUST Center, Kyushu University; Nishi-ku Fukuoka 819-0395 Japan
3. Electronics and Communications Engineering Department; E-JUST; New Borg Al-Arab Alex 21934 Egypt
Funder
Jordan University of Science and Technology
Scientific Research (B) from JSPS.KAKENHI
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Digitally Controlled CMOS Quadrature Ring Oscillator with Improved FoM for GHz Range All-Digital Phase-Locked Loop Applications;Pokharel;2012 IEEE MTT-S International Symposium Degest, Montreal, Canada,2012
2. Low Phase Noise Wide Tunning Range N-Push Cyclic-Coupled Ring Oscillators;Abdul-Latif;IEEE J Solid-State Circuits,2012
3. V. Sikarwar N. Yadav S. Akashe 1491 1494
4. 2.4-10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor;Lee;Jpn J Appl Phys,2011
5. P. Mroszczyk P. Dudek 1 4
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1. A High FoM and Low Phase Noise Edge-Injection-Based Ring Oscillator in 350 nm CMOS for Sub-GHz ADPLL Applications;Electronics;2023-09-06
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