A 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier with uniformly distributed voltage stresses-Reference-Cited by-同舟云学术

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A 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier with uniformly distributed voltage stresses

Published:2017-02-03 Issue:11 Volume:45 Page:1660-1672
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Im Donggu¹,Kwon Kuduck²,Lee In-Young³

Affiliation:

1. Division of Electronics Engineering; Chonbuk National University; Jollabuk-do 561-756 Korea

2. Department of Electronics Engineering; Kangwon National University; Gangwon-do 200-701 Korea

3. RF Development Team, S. LSI Business; Samsung Electronics; Gyeonggi-do 18448 Korea

Funder

Ministry of Education

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Design of high-order switches for multimode applications on a silicon-on-insulator technology;Tombak;IEEE Transactions on Microwave Theory and Techniques,2013

2. V. Blaschke A. Unikovski P. Hurwitz S. Chaudhry A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI IEEE Silicon Monolithic Integrated Circuits in RF Systems SiRF 2013 144 146

3. Integrated bias circuits of RF CMOS cascade power amplifier for linearity enhancement;Koo;IEEE Transactions on Microwave Theory and Techniques,2012

4. An area efficient body contact for low and high voltage SOI MOSFET devices;Daghighi;Solid-State Electronics,2008

5. A fully integrated quadband GSM/GPRSCMOSpower amplifier;Aoki;IEEE Journal of Solid-State Circuits,2008

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1. Analytical Approach to Improve the Performance of a Fully Integrated Class-F Power Amplifier with 0.13 µm BiCMOS Technology Using Drain–Bulk Capacitor Modulation;Electronics;2023-06-23

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