Preparation of sapphire substrates for Gas phase GaN epitaxial processes-Reference-Cited by-同舟云学术

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Preparation of sapphire substrates for Gas phase GaN epitaxial processes

Published:1977 Issue:10 Volume:12 Page:1105-1110
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Kaliński Zb.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference7 articles.

1. Gas Phase Etching of Sapphire with Sulfur Fluorides

2. Gas Phase Etching of Sapphire

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III–Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation;Japanese Journal of Applied Physics;2012-02-01

2. III–Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation;Japanese Journal of Applied Physics;2012-01-18

3. Study on Sapphire Surface Preparation for III-Nitride Heteroepitaxial Growth by Chemical Treatments;Journal of The Electrochemical Society;2002

4. Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire;Japanese Journal of Applied Physics;1998-09-15

5. References;Etching of Crystals - Theory, Experiment, and Application;1987

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