Quantitative Bestimmung der Zusammensetzung von Ga1−xAlxAs-Epitaxieschichten mit der Elektronenstrahl-Mikroanalyse (ESMA)-Reference-Cited by-同舟云学术

Quantitative Bestimmung der Zusammensetzung von Ga1−xAlxAs-Epitaxieschichten mit der Elektronenstrahl-Mikroanalyse (ESMA)

Published:1974 Issue:3 Volume:9 Page:227-236
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Streubel P.,Martius G.,Jacobs K.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference17 articles.

1. Evalulation of correction procedures used in electron probe microanalysis with emphasis on atomic number interval 13 to 33

2. : Electron Probe Microanalysis, New York, London 1963

3. Preparation and Properties of AlAs-GaAs Mixed Crystals

4. : Handbook of X-Ray and Microprobe Data, Oxford 1969

5. , : V. Internat. Kongreß für Röntgenoptik und Mikroanalyse, Tübingen 1968, Berlin, Heidelberg, New York 1969 S. 146

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nouvelle cellule de croissance par épitaxie en phase liquide;Journal of Crystal Growth;1977-08

2. Temperature dependence of the indirect absorption edge in AlxGa1−xAs;Physica Status Solidi (a);1976-03-16

3. Luminescence of (GaAl)As layers grown by temperature gradient liquid phase epitaxy;Kristall und Technik;1975

4. Electron mobility in Alx Ga1−x As;Physica Status Solidi (a);1974-10-16

5. Information about the Growth Process from Aluminium Concentration Profiles in Ga1−xAlxAs Liquid Phase Epitaxial Layers;Kristall und Technik;1974