Beeinflussung des spezifischen Widerstandes von sauerstoffreichen Silizium-Einkristallen durch Temperprozesse-Reference-Cited by-同舟云学术

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Beeinflussung des spezifischen Widerstandes von sauerstoffreichen Silizium-Einkristallen durch Temperprozesse

Published:1977 Issue:2 Volume:12 Page:189-196
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Gaworzewski P.,Riemann H.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference11 articles.

1. The effect of carbon on thermal donor formation in heat treated pulled silicon crystals

2. Reactions of group iii acceptors with oxygen in silicon crystals

3. , : Kristall und technik (in Vorberitung)

4. Electrical and Optical Properties of Heat-Treated Silicon

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Maximum Concentration of Thermal Donors Formed at 450 °C in Silicon in Dependence on the Oxygen Concentration;physica status solidi (a);1986-03-16

2. Defect Aggregates In Silicon;MRS Proceedings;1985

3. Oxygen‐related thermal donors in silicon: A new structural and kinetic model;Journal of Applied Physics;1984-09-15

4. Thermal donors in silicon: Consistent interpretation of Hall-effect and capacitance transient spectroscopy;Applied Physics A Solids and Surfaces;1983-05

5. Oxygen diffusion and thermal donor formation in silicon;Applied Physics A Solids and Surfaces;1982-06

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