Twinning in GaAs nanowires on patterned GaAs(111)B-Reference-Cited by-同舟云学术

Twinning in GaAs nanowires on patterned GaAs(111)B

Published:2014-10-07 Issue:1 Volume:50 Page:62-68
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Walther Thomas¹²,Krysa Andrey B.²³

Affiliation:

1. Kroto Centre for High-Resolution Imaging & Analysis; Department of Electronic & Electrical Engineering; University of Sheffield; Mappin Street Sheffield S1 3JD UK

2. Semiconductor Materials & Devices Group; Department of Electronic & Electrical Engineering; University of Sheffield; Mappin Street Sheffield S1 3JD UK

3. National Centre for III/V Technologies; Nanoscience and Technology Building; University of Sheffield; North Campus, Broad Lane Sheffield S3 7HQ UK

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference32 articles.

1. Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type

2. GaAs free‐standing quantum‐size wires

3. Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process

4. Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

5. Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)

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