Plasma-enhanced chemical vapor deposition of 99.95% 28Si in form of nano- and polycrystals using silicon tetrafluoride precursor-Reference-Cited by-同舟云学术

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Plasma-enhanced chemical vapor deposition of 99.95% 28Si in form of nano- and polycrystals using silicon tetrafluoride precursor

Published:2010-07-26 Issue:9 Volume:45 Page:983-987
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Sennikov P.,Pryakhin D.,Andreev B.,Gavrilenko L.,Drozdov Yu.,Drozdov M.,Pohl H.-J.,Shashkin V.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201000088/fullpdf

Reference18 articles.

1. Isotope effects on the optical spectra of semiconductors

2. Large-scale production of highly enriched28Si for the precise determination of the Avogadro constant

3. Isotopically engineered semiconductors: from the bulk to nanostructures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon-28-Tetrafluoride as an Educt of Isotope-Engineered Silicon Compounds and Bulk Materials for Quantum Systems;Molecules;2024-09-05

2. Production of stable silicon and germanium isotopes via their enriched volatile compounds;Journal of Radioanalytical and Nuclear Chemistry;2015-05-26

3. PECVD growth of crystalline silicon from its tetrafluoride;Crystal Research and Technology;2010-07-26

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