Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi-mono-crystalline silicon ingots
Author:
Affiliation:
1. Fraunhofer IISB; Schottkystr. 10 91058 Erlangen Germany
2. FraunhoferTHM; Am St.-Niclas-Schacht 13 09599 Freiberg Germany
3. SolarWorld Innovations GmbH; Berthelsdorfer Str. 111A 09599 Freiberg Germany
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference16 articles.
1. D. Hu T. Zhang L. He H. Chen D. Zhong S. Cao J. Gao Y. Wan Proceedings 38th IEEE Photovoltaics Specialist Conference Austin, USA 2012 2735 2738
2. Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains
3. The structure of high-angle grain boundaries
4. A New Preferential Etch for Defects in Silicon Crystals
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