The growth and dislocation characterization of Yb0.005Y0.848Lu0.147VO4mixed laser crystal-Reference-Cited by-同舟云学术

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The growth and dislocation characterization of Yb0.005Y0.848Lu0.147VO4mixed laser crystal

Published:2014-07-30 Issue:10 Volume:49 Page:785-788
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Shi-ming Zhang¹²,Bing Teng¹²,De-gao Zhong¹²,Bing-tao Zhang¹²,Chao Wang¹²,Yu-yi Li¹²,Li-Ting Yang¹²,Peng You³

Affiliation:

1. College of Physics; Qingdao University; Qingdao 266071 China

2. Key Laboratory of Photonics Materials and Technology in Universities of Shandong; Qingdao University; Qingdao 266071 China

3. Department of Applied Physics; The Hong Kong Polytechnic University; Hong Kong China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference13 articles.

1. Growth and laser characterization of a mixed laser crystal Nd: Lu0.141Y0.855VO4

2. Continuous wave laser operation of Yb3+:YVO4

3. Continuous-wave laser operation of Yb:LuVO_4

4. Comparative Study of High-Power Continuous-Wave Laser Performance of Yb-Doped Vanadate Crystals

5. Spectroscopy and continuous-wave diode-pumped laser action of Yb^3+:YVO_4

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