Carbon doped GaN layers grown by Pseudo-Halide Vapour Phase Epitaxy
Author:
Affiliation:
1. Leibniz Institute for Crystal Growth; Max-Born-Str. 2 D-12489 Berlin Germany
2. Currently employed by ASM Belgium N.V.; Kapeldreef 75 B-3001 Leuven Belgium
3. Institut für Festkörperphysik; TU Berlin; Hardenbergstraße 36 10623 Berlin Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201600364/fullpdf
Reference17 articles.
1. Properties of VPE‐grown GaN doped with Al and some iron‐group metals
2. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
3. Characteristics of semi-insulating, Fe-doped GaN substrates
4. Properties of Fe-doped semi-insulating GaN structures
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