Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis-Reference-Cited by-同舟云学术

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Growth imperfections in oriented grown KDP crystals by X-ray topographic analysis

Published:2012-08-13 Issue:10 Volume:47 Page:1083-1087
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

De-Gao Zhong,Bing Teng,Zheng-He Yu,Lin-Xiang He,Shu-Hua Wang,Xue-Jun Jiang,Jiang-Tao Ma,Shu-Jie Zhuang,Wan-Xia Huang

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201200209/fullpdf

Reference17 articles.

1. Investigation of Temperature Dependence and Impurity Content on the Growth Rate of KDP Crystals

2. The rapid growth of large-scale KDP single crystal in brief procedure

3. Rapid growth of KDP-type crystals

4. Perspectives for creation of highly effective technology for fabricating KDP and KD*P crystals for ICF

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth, THz properties, and Hirshfeld surface studies of 4-N,N-dimethylamino-4- N-methyl-stilbazolium 2,4,6-trimethylbenzenesulfonate single crystal;Journal of Materials Science: Materials in Electronics;2022-01-05

2. Effect of disordered structure and crystal defects on heat transfer behavior in Er:Yb: YCa4O(BO3)3 crystal;Journal of Physics and Chemistry of Solids;2019-01

3. Growth, transmission, Raman spectrum and THz generation of DAST crystal;RSC Advances;2016

4. Shape-controlled growth and characterization of a large KDP crystal;CrystEngComm;2015

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