Stacking faults in semi-polar 6H-SiC single crystals-Reference-Cited by-同舟云学术

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Stacking faults in semi-polar 6H-SiC single crystals

Published:2011-03-04 Issue:4 Volume:46 Page:357-360
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Gao Y. Q.,Hu X. B.,Xu X. G.,Chen X. F.,Peng Y.,Song S.,Jiang M. H.,Huang W. X.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201000643/fullpdf

Reference14 articles.

1. J. Palmour R. Singh R. C. Glass O. Kordina C. H. Carter 1997 IEEE International Symposium (IEEE,Weimar, 1997), p. 25.

2. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

3. K. Takahashi A. Yoshikawa A. Sandhu Wide Bandgap Semiconductors-Fundamental Properties and Modern Photonic and Electronic Devices (Springer, Berlin, 2007), p. 231.

4. Performance limiting micropipe defects in silicon carbide wafers

5. Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions

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