Comment on “Debye temperature and melting point of II-VI and III-V semiconductors” [Cryst. Res. Technol. 45, No. 9, 920-924 (2010)]-Reference-Cited by-同舟云学术

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Comment on “Debye temperature and melting point of II-VI and III-V semiconductors” [Cryst. Res. Technol. 45, No. 9, 920-924 (2010)]

Published:2015-08-18 Issue:1 Volume:51 Page:115-116
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Daoud Salah¹,Latreche Abdelhakim²,Bencheikh Abdelhalim³

Affiliation:

1. Laboratoire Matériaux et Systèmes Electroniques (LMSE); Université de Bordj Bou Arreridj; 34000 Algérie

2. Département des Sciences de la matière; Université de Bordj Bou Arreridj; 34000 Algérie

3. Département des Sciences et techniques; Université de Bordj Bou Arreridj; 34000 Algérie

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference2 articles.

1. Debye temperature and melting point of II-VI and III-V semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure effect on some physical properties of calcium oxide material;Chemical Physics Impact;2023-12

2. Mechanical Behavior of Aluminum Phosphide under Pressure;Acta Physica Polonica A;2018-01

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