Modeling of high-frequency noise of silicon CMOS transistors for RFIC design-Reference-Cited by-同舟云学术

Modeling of high-frequency noise of silicon CMOS transistors for RFIC design

Published:2014-02-25 Issue:5-6 Volume:27 Page:802-811
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Antonopoulos Angelos¹,Bucher Matthias¹,Papathanasiou Kostas¹,Makris Nikolaos¹,Mavredakis Nikolaos¹,Sharma Rupendra Kumar¹,Sakalas Paulius²³,Schroter Michael²

Affiliation:

1. School of Electronic and Computer Engineering; Technical University of Crete; 73100 Chania Greece

2. Department of Electrical and Computer Engineering; Technical University Dresden; 01062 Dresden Germany

3. Semiconductor Physics Institute; Center for Physical Sciences and Technology; 01108 Vilnius Lithuania

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference30 articles.

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3. A fully monolithic 260-μW, 1-GHz subthreshold low noise amplifier;Perumana;IEEE Microwave and Wireless Components Letters,2005

4. A 60μW LNA for 2.4 GHz wireless sensors network applications;Taris;IEEE Radio Frequency Integrated Circuits Symposium,2011

5. Europractice, Activity Report 2012, Europractice IC Service http://www.europractice-ic.com/docs/Annual_report_2012.pdf

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