A linear LTE-advanced CMOS RF power amplifier with integrated phase linearizer-Reference-Cited by-同舟云学术

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A linear LTE-advanced CMOS RF power amplifier with integrated phase linearizer

Published:2017-03-27 Issue:5 Volume:59 Page:1119-1122
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Jin Bo¹,Kim Younggwan¹,Woo Jung-Lin¹,Park Sunghwan¹,Park Hongjong¹,Kwon Youngwoo¹

Affiliation:

1. Department of Electrical and Computer Engineering (ECE); Institute of New Media and Communications (INMC), Seoul National University; Seoul 151-742 Korea

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. A high-efficiency SOI CMOS stacked-FET power amplifier using phase-based linearization;Kim;IEEE Microwave Wireless Compon Lett,2014

2. Linearization of CMOS cascode power amplifiers through adaptive bias control;Jin;IEEE Trans Microwave Theory Techn,2013

3. A feedback technique to compensate for AM-PM distortion in linear CMOS Class-F power amplifier;Kim;IEEE Microwave. Wireless Compon Lett,2014

4. Highly linear fully integrated wideband RF PA for LTE-advanced in 180-nm SOI;Francois;IEEE Trans Microwave. Theory Techn,2015

5. A.F. Aref R. Negra M.A. Khan 2015 40 41

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