Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT-Reference-Cited by-同舟云学术

Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT

Published:2015-10-27 Issue:1 Volume:30 Page:e2117
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Jena Kanjalochan¹,Swain Raghunandan¹,Lenka T. R.¹

Affiliation:

1. Microelectronics and VLSI Design Group Department of Electronics and Communication Engineering; National Institute of Technology; Silchar Assam 788010 India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference32 articles.

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3. Rajabi S Orouji AA Moghadam AH Mahabadi Jamali SE Proceedings of the IEEE International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN) 2011 269 271

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5. Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices;Jena;Int J Numer Model Electron Netw. Devices Fields,2015

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