Hybrid integration of 4-W and 8-W S-band GaN power amplifiers on a selectively anodized aluminum substrate-Reference-Cited by-同舟云学术

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Hybrid integration of 4-W and 8-W S-band GaN power amplifiers on a selectively anodized aluminum substrate

Published:2012-03-13 Issue:5 Volume:54 Page:1261-1263
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Kim Dong-Wook

Funder

National Research Foundation of Korea

Korean Government

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.26750/fullpdf

Reference9 articles.

1. GaN-based RF power devices and amplifiers;Mishra;Proc IEEE,2008

2. High-efficiency ultra-wideband power amplifier in GaN technology;Colantonio;Electron Lett,2008

3. New design method of uniform and nonuniform distributed power amplifiers;Duperrier;IEEE Trans Microwave Theory Tech,2001

4. A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology;Campbell;IEEE J Solid-State Circuits,2009

5. D.W. Kim I.H. Jeong H.S. Sung D.O. Kong J.S. Lee C.M. Nam Y.S. Kwon 2002 1561 1564

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RLC Low-Pass Filter with Controlled Parameters;2022 International Conference on Electrical Engineering and Photonics (EExPolytech);2022-10-20

2. 2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors;International Journal of RF and Microwave Computer-Aided Engineering;2016-03-10

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