The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes-Reference-Cited by-同舟云学术

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The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

Published:2010-10-13 Issue:1 Volume:120 Page:322-328
ISSN:0021-8995
Container-title:Journal of Applied Polymer Science
language:en
Short-container-title:J. Appl. Polym. Sci.

Author:

Uslu Habibe,Altındal Şemsettin,Tunç Tuncay,Uslu İbrahim,Mammadov Tofig S.

Publisher

Wiley

Subject

Materials Chemistry,Polymers and Plastics,Surfaces, Coatings and Films,General Chemistry

Reference44 articles.

1. Electrical properties of gamma-irradiated, pure, and nickel chloride-doped polyvinyl alcohol films

2. Electrical and optical studies on γ-irradiated pure and chromium-chloride-doped polyvinyl alcohol

3. Study of thermal currents in CoCl2-doped poly (vinyl alcohol) films irradiated with γ-rays

4. The effect of γ-irradiation on slow crack growth in polyethylene

5. The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

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1. Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications;Gels;2024-08-20

2. Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities;Journal of Electronic Materials;2024-06-12

3. The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor;IEEE Sensors Journal;2024-06-01

4. Electrical and dielectric behaviors of Al/SiO₂-surfactant/n-Si schottky structure in wide range of voltage and frequency;Physica Scripta;2024-04-23

5. Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy;Journal of Materials Science: Materials in Electronics;2024-02

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