Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films-Reference-Cited by-同舟云学术

Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films

Author:

Venkataiah Sunke¹,Chandra S.V. Jagadeesh²,Chalapathi Uppala³,Ramana Ch.V.V.⁴,Uthanna Suda¹

Affiliation:

1. Department of Physics Sri Venkateswara University Tirupati India

2. Department of Electronics and Communication Engineering Vignan's Institute of Information Technology (A) Visakhapatnam India

3. Center for Opto‐electronic Materials and Devices Korea Institute of Science and Technology (KIST) Seoul Republic of Korea

4. Department of Electrical and Electronics Engineering Science University of Johannesburg Johannesburg South Africa

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

Reference32 articles.

2. Nanostructured hafnium oxide thin films for sensing carbon monoxide: an experimental investigation;Dave V;Mater Today: Proc,2018

3. Application of metal oxide semiconductors in light driven organic transformations;Paiva PR;Cat Sci Technol,2019

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