Ab-initioMO electronic structure calculations of defect-pair complexes in silicon-Reference-Cited by-同舟云学术

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Ab-initioMO electronic structure calculations of defect-pair complexes in silicon

Published:1986-03-10 Issue:S20 Volume:30 Page:749-761
ISSN:0020-7608
Container-title:International Journal of Quantum Chemistry
language:en
Short-container-title:Int. J. Quantum Chem.

Author:

Gomes Vivil� M. S.,Assali Lucy V. C.,Leite Jos� R.

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Reference43 articles.

1. Lecture Notes;Giber,1983

2. Divacancy in silicon: Hyperfine interactions from electron-nuclear double-resonance measurements. II

3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter

4. Electronic structure of hydrogen- and alkali-metal-vacancy complexes in silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Decay-kinetics study of atomic hydrogen ina-Si:(H,O,N) and natural beryl;Physical Review B;1990-10-01

2. Electronic structure of complex defects in silicon;New Developments in Semiconductor Physics

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