Affiliation:
1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou the People's Republic of China
2. State Key Laboratory of Supramolecular Structure and Materials College of Chemistry, Jilin University Changchun the People's Republic of China
3. Shanxi‐Zheda Institute of Advanced Materials and Chemical Engineering Taiyuan the People's Republic of China
Abstract
AbstractOrganic–inorganic halide perovskite single crystals (SCs) are promising materials for detecting ionizing radiation owing to their outstanding photoelectric conversion capability and inexpensive solution processability. However, the accuracy and stability of the detectors have been limited due to the charge traps and defects in SCs, especially when operated under high‐precision photon‐counting mode for energy spectrum acquisition. Here, we proposed a trap freezing deactivation route, which obviously suppressed dark current and noise by up to 97% and 92%, respectively. Furthermore, the bulk ion migration effect was essential for the ability to instantly self‐heal defects induced by radiation damage at temperatures down to −30°C. Consequently, the detector exhibits a record high energy resolution of 7.5% at 59.5 keV for 241Am γ‐ray source, which is the best solution‐processed semiconductor radiation detectors at the same energy range. In addition, the detector maintains over 90% of its initial performance after 9 months of storage when tested in the air. Our results will represent a revision of the paradigm that high‐spectral‐resolution and robust radiation detectors can only be realized with high temperature grown inorganic semiconductor single crystals.image
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Fundamental Research Funds for the Central Universities
Subject
Materials Chemistry,Surfaces, Coatings and Films,Materials Science (miscellaneous),Electronic, Optical and Magnetic Materials