Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells-Reference-Cited by-同舟云学术

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Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells

Published:2001-12 Issue:2 Volume:188 Page:871-875
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Pendlebury S.T.,Lynam P.,Mowbray D.J.,Parbrook P.J.,Wood D.A.,Lada M.,O'Neill J.P.,Cullis A.G.,Skolnick M.S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Optical investigations of AlGaN on GaN epitaxial films

2. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs

3. Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

4. Many-body effects on excitons properties in GaN/AlGaN quantum wells

5. Spontaneous polarization effects inGaN/AlxGa1−xNquantum wells

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1. III-Nitride Short Period Superlattices for Deep UV Light Emitters;Applied Sciences;2018-11-23

2. Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers;Journal of Applied Physics;2008-09

3. Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys;Journal of Applied Physics;2006-01

4. About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy;Superlattices and Microstructures;2004-10

5. Guide to the Literature of Piezoelectricity and Pyroelectricity. 21;Ferroelectrics;2004-01

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