Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions-Reference-Cited by-同舟云学术

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Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions

Published:2001-12 Issue:2 Volume:188 Page:591-594
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Shishkin Y.,Devaty R.P.,Choyke W.J.,Yun F.,King T.,Morko� H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition

2. Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC

3. Luminescence Studies of Oxygen-Related Defects In Aluminum Nitride

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Overview of band-edge and defect related luminescence in aluminum nitride;Journal of Luminescence;2016-10

2. AlN bandgap temperature dependence from its optical properties;Journal of Crystal Growth;2008-08

3. Growth and Luminescence Properties of Subsequently Grown AlInN Layers on AlN Homoepitaxial Layers by Ammonia Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2007-06-06

4. Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy;Journal of Crystal Growth;2007-04

5. Luminescence properties of wurtzite AlN nanotips;Applied Physics Letters;2006-10-16

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