P-127: Dual-Gate Self-Aligned IGZO TFTs Monolithically Integrated with High-Temperature Bottom Moisture Barrier for Flexible AMOLED-Reference-Cited by-同舟云学术

P-127: Dual-Gate Self-Aligned IGZO TFTs Monolithically Integrated with High-Temperature Bottom Moisture Barrier for Flexible AMOLED

Published:2018-05 Issue:1 Volume:49 Page:1577-1580
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Kronemeijer Auke Jisk¹,Akkerman Hylke¹,van der Steen Jan-Laurens¹,Steudel Soeren²,Pendyala Raghu¹,Panditha Pradeep¹,Bel Thijs¹,van Diesen Karin¹,de Haas Gerard¹,Maas Joris¹,de Riet Joris¹,Rovers Madelon¹,Verbeek Roy¹,Nag Manoj²,Verschueren Lynn³,Genoe Jan²³,Dehaene Wim³,Lu Ya-Ju⁴,Chiang Shin-Chuan⁴,Huang Yen-Yu⁴,Yeh Ming-Hua⁴,Gelinck Gerwin¹

Affiliation:

1. TNO / Holst Centre; High Tech Campus 31 Eindhoven The Netherlands 5656 AE

2. IMEC; Kapeldreef 75 Leuven Belgium 3001

3. ESAT, KU Leuven; Kasteelpark Arenberg 10 Leuven Belgium 3001

4. Chungwha Picture Tubes, LDT.; 1127 Heping Rd. Bade City, Taoyuan Taiwan R.O.C. 334

Funder

European Regional Development Fund

Publisher

Wiley

Reference15 articles.

1. Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

2. Characteristics of Double-Gate Ga–In–Zn–O Thin-Film Transistor