52‐4: Laser‐Enabled Extremely‐High Rate Technology for µLED Assembly-Reference-Cited by-同舟云学术

52‐4: Laser‐Enabled Extremely‐High Rate Technology for µLED Assembly

Published:2018-05 Issue:1 Volume:49 Page:692-695
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Marinov Val R.¹

Affiliation:

1. Uniqarta, Inc. Fargo ND USA www.uniqarta.com

Funder

National Science Foundation

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.12352

Reference10 articles.

1. Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

2. Augmented Reality

3. Chu R.Press Release: TrendForce Says Potential Scale of Micro‐LED Market Could Reach US$30~40 Billion If It Was to Supplant the Current Display Chain.2017[available from:http://press.trendforce.com/node/view/2801.html].

4. Fabrication of matrix-addressable InGaN-based microdisplays of high array density

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