Improving the quality of meshes for the simulation of semiconductor devices using Lepp-based algorithms-Reference-Cited by-同舟云学术

Improving the quality of meshes for the simulation of semiconductor devices using Lepp-based algorithms

Published:2003 Issue:2 Volume:58 Page:333-347
ISSN:0029-5981
Container-title:International Journal for Numerical Methods in Engineering
language:en
Short-container-title:Int. J. Numer. Meth. Engng.

Author:

Hitschfeld N.,Villablanca L.,Krause J.,Rivara M. C.

Publisher

Wiley

Subject

Applied Mathematics,General Engineering,Numerical Analysis

Reference11 articles.

1. Comprehensive semiconductor device simulation for silicon ULSI. Ph.D. Thesis, Stanford University, 1990.

2. Control volume meshes using sphere packing: generation, refinement and coarsening. In Proceedings of the 5th International Meshing Roundtable, Pittsburgh, Pennsylvania, 1996; 47-61.

3. Boundary-sensitive mesh generation using an offsetting technique

4. Mesh generation algorithms for three-dimensional semiconductor process simulation. Ph.D. Thesis, ETH Zürich, Series in Microelectronics, vol. 97. Hartung-Gorre Verlag: Konstanz, Germany, 2000.

5. Generation of oriented three-dimensional Delaunay grids suitable for the control volume integration method

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