XAFS analysis of indium oxynitride thin films grown on silicon substrates
Author:
Affiliation:
1. College of Nanotechnology; King Mongkut's Institute of Technology Ladkrabang; Bangkok; 10520; Thailand
2. Thai Microelectronic Center; National Science and Technology Development Agent; Pathumthani; 12120; Thailand
Publisher
Wiley
Subject
Spectroscopy
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/xrs.2438/fullpdf
Reference35 articles.
1. Optical bandgap energy of wurtzite InN
2. Unusual properties of the fundamental band gap of InN
3. Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN
4. Role of semicore states in the electronic structure of group-III nitrides: An exact-exchange study
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