Design and implementation of a 94/188 GHz dual-band VCO with gain-enhanced frequency doubler IN 90 nm CMOS-Reference-Cited by-同舟云学术

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Design and implementation of a 94/188 GHz dual-band VCO with gain-enhanced frequency doubler IN 90 nm CMOS

Published:2017-01-26 Issue:3 Volume:59 Page:675-681
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Lin Yo-Sheng¹,Lin Yu-Ching¹,Lan Kai-Siang¹

Affiliation:

1. Department of Electrical Engineering; National Chi Nan University; Puli Taiwan R.O.C

Funder

Ministry of Science and Technology (MOST) of the R.O.C.

National Chip Implementation Center (CIC), Taiwan

National Nano-Device Laboratory (NDL), Taiwan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. M. Adnan E. Afshari 2013

2. Wide tuning range W-band Colpitts VCO in 90 nm CMOS;Socher;Electron Lett,2011

3. R.C. Liu H.Y. Chang C.H. Wang H. Wang 2004

4. A wide tuning range 69 GHz push-push VCO using 0.18 μm CMOS technology;Chiu;IEEE Microw Wireless Compon Lett,2010

5. An 80 GHz wide tuning range push-push VCO with gm-boosted full-wave rectification technique in 90 nm CMOS;Chu;IEEE Microw Wireless Compon. Lett,2010

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