Enhanced Hot Carrier Up‐Conversion in Graphene By Quantum Dot Coating-Reference-Cited by-同舟云学术

Enhanced Hot Carrier Up‐Conversion in Graphene By Quantum Dot Coating

Published:2021-11-07 Issue:3 Volume:10 Page:2101563
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Ma He¹^ORCID,Shang Nianze¹,Liang Jing²,Liu Chang³,Wang Fangfang⁴,Zhao Mengze²,Zhang Zhibin²,Zhang Zhihong³,Ma Chaojie²,Liu Can²,Wu Muhong³,Shen Huaibin⁴,Hong Hao⁵,Liu Kaihui⁶

Affiliation:

1. State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐optoelectronics School of Physics Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China

2. State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 China

3. International Centre for Quantum Materials Collaborative Innovation Centre of Quantum Matter Peking University Beijing 100871 China

4. Key Laboratory for Special Functional Materials of Ministry of Education School of Materials and Engineering Henan University Kaifeng 475001 China

5. State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐optoelectronics School of Physics Interdisciplinary Institute of Light‐Element Quantum Materials and Research Center for Light‐Element Advanced Materials Peking University Beijing 100871 China

6. State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐optoelectronics School of Physics International Centre for Quantum Materials Collaborative Innovation Centre of Quantum Matter Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202101563

Reference46 articles.

1. High field transport in semiconductors. The drifted Maxwellian approach. I. general theory