A Dual Mode MoTe2/WS2/WSe2 Double Van der Waals Heterojunctions Phototransistor for Optical Imaging and Communication

Abstract

AbstractVan der Waals (vdW) heterostructures, formed by stacking different two‐dimensional (2D) materials, have emerged as a promising platform for next‐generation optoelectronic devices through band engineering. While various all‐2D and mixed‐dimensional heterojunction phototransistors based on p–n junctions or Schottky junctions have been developed, their performance, often constrained by the trade‐off between responsivity (R) and response speed, limits their widespread application. Here, a dual‐mode phototransistor based on a MoTe2/WS2/WSe2 double vdW heterostructure is designed. The bottom WSe2 layer effectively modulates the entire MoTe2/WS2 heterojunction channel, enabling both photoconductive and photovoltaic modes with exceptional optoelectronic properties in a single device. Specifically, the proposed device exhibits a maximum R of 2540 A W−1 and an impressive specific detectivity of 8 × 1012 Jones under the photoconductive mode. Under the photovoltaic mode, it achieves a fast response speed of 35.3/49.1 µs and a high light on/off ratio of 2 × 105. Additionally, the device exhibits latent potential for high‐resolution imaging across various wavelengths and fast optical communication. This work offers a rational alternative for achieving dual‐mode photodetection and highlights its promising application prospects in imaging and optical communication.