Fingerprinting Defects in Hexagonal Boron Nitride via Multi‐Phonon Excitation

Author:

Tieben Pablo12ORCID,Schell Andreas W.123

Affiliation:

1. Physikalisch‐Technische Bundesanstalt Bundesallee 100 38116 Braunschweig Germany

2. Institute for Solid State Physics Gottfried Wilhelm Leibniz University Appelstrasse 2 30167 Hannover Germany

3. Institute of Semiconductor and Solid State Physics Johannes Kepler University Altenberger Strasse 69 Linz 4040 Austria

Abstract

AbstractSingle photon emitters in hexagonal boron nitride (hBN) have gathered a lot of attention due to their favorable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these emitters has remained unknown thus far. Recently, several studies have tied the emission in the yellow spectral region to carbon‐related defects, but the exact atomic structure of the defects remains elusive. In this study, photoluminescence emission and excitation spectroscopy is performed on a large number of emitters within this region. By comparing the experimental data with theoretical predictions, the origin of yellow single photon emission in hexagonal boron nitride is determined. Knowledge of this atomic structure and its optical properties is crucial for the reliable implementation of these emitters in quantum technologies.

Funder

Deutsche Forschungsgemeinschaft

European Metrology Programme for Innovation and Research

Publisher

Wiley

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