Wide‐Wavelength Tunable Mid‐Infrared Lasing Based on Black Arsenic Phosphorus

Author:

Zhang Junrong12,Xie Maobin3,Zhang Yushuang45,Wang Junyong2,Zhao Xinchao3,Chen Cheng12,Zhang Quanlong4,Xia Meng2,Li Jie2,Dong Zhuo2,Zhang Yan12,Ren Zeqian2,Liu Tong6,Pan Anlian4,Wang Shaowei3,Zhang Kai2ORCID

Affiliation:

1. School of Nano‐Tech and Nano‐Bionics University of Science and Technology of China Hefei 230026 China

2. CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Suzhou 215123 China

3. State Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

4. Key Laboratory for Micro‐Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometrics College of Materials Science and Engineering Hunan University Changsha Hunan 410082 China

5. State Key Laboratory of Pulsed Power Laser Technology College of Electronic Engineering National University of Defense Technology Hefei 230037 China

6. Vacuum Interconnected Nanotech Workstation (NANO‐X) Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences Suzhou 215123 China

Abstract

AbstractMid‐infrared (MIR) semiconductor laser sources are essential for applications in gas detection, infrared imaging, and high‐speed free space optical communications. At present, the dynamic wavelength tunability of MIR lasers based on lead salt, antimonide, and quantum cascade lasers is limited and their compact size as well as heterogeneous integration are still challenging. Two‐dimensional (2D) materials, used as optical gain materials, have the flexible tunability and compatible van der Waals integrations—providing many new possibilities for constructing MIR laser sources of large tunability and high integration. Here, wide‐wavelength tunable MIR vertical cavity surface emitting lasers (VCSELs) integrated on silicon substrates are realized based on 2D black arsenic phosphorus (b‐AsxP1−x). The emission wavelength of the optically pumped laser device is demonstrated to be tuned from 3.42 to 4.65 µm at room temperature, which could be controlled by adjusting the alloy composition and thickness of the gain media b‐AsxP1−x. The tunable MIR VCSEL device would pave the way for further exploration of 2D materials‐based IR lasers working as on‐chip light sources.

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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