High‐Efficiency Semitransparent Near‐Infrared Organic Photodetectors Enabled by a Molecular Crystal Network

Author:

Quan Huilei1,Zhong Zhiming2,Zhou Zhisheng1,Wu Xuefei3,Shi Chuqi4,Fink Zachary35,Zhou Guanqing6,Shang Ying1,Yin Zhipeng1,Zhang Anyang6,Wang Cheng7,Li Ning1,Zhong Wenkai1ORCID,Huang Fei1,Ying Lei1ORCID

Affiliation:

1. Institute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China

2. School of Mechanical Engineering Dongguan University of Technology Dongguan 523808 China

3. Materials Science Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

4. Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen 518055 China

5. Department of Polymer Science and Engineering University of Massachusetts Amherst MA 01003 USA

6. Frontiers Science Center for Transformative Molecules Center of Hydrogen Science and School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai 200240 China

7. Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Abstract

AbstractSemitransparent organic photodetectors (ST‐OPDs) show immense promise for integration into optoelectronic devices, offering adjustable absorption and see‐through functionalities. However, achieving high‐performance ST‐OPDs remains challenging, necessitating a delicate balance of low dark current density, high external quantum efficiency, and optimal visible light transmission. Here, a strategy is presented using anode interfacial materials (AIMs) as the donor and narrow bandgap non‐fullerene acceptors (NFAs) to formulate the donor: acceptor light‐sensitive layer. Critical to the approach is the incorporation of 1,8‐diiodooctane during film processing, enabling the formation of morphology with an NFA molecular crystal network embedded within the donor polymer matrix. This optimized morphology substantially boosted device external quantum efficiency and reduced dark current under reverse bias, yielding a remarkable special detectivity of over 1013 Jones at 840 nm under a bias of −0.1 V. ST‐OPDs are achieved with detectivity surpassing 1012 Jones and notable average visible transmittance of over 50%. These findings highlight the potential of AIM:NFA combinations for high‐efficiency ST‐OPDs by finely controlling morphology through multiple length scales, opening doors for various applications in transparent electronics and beyond.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

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