Light and Force Multifunctional Detector Based on the Interfacial Polarization of the ITO/MAPbBr3 Schottky Junction

Abstract

AbstractThe MAPbBr3 halide perovskite with a cubic paraelectric phase exhibits excellent semiconductor properties. Here, an interfacial polarization (Pin) at the ITO/MAPbBr3 Schottky junction can largely enhance photovoltaic current and be applied in the light and force multifunctional detector. An external force can alter the Pin and increase the photocurrent of the ITO/MAPbBr3/spiro‐OMeTAD/ITO detector, and a 1 N force increases the short‐circuit photocurrent by 120%. Furthermore, the ITO/MAPbBr3/ITO structure with one ITO surface in light and another ITO surface in dark exhibits an equivalent piezoelectric coefficient (d33) of up to 83 pC N−1 since the Pin and the corresponding photovoltaic current dynamically change with periodic external force. The light and force multifunctional detectors will promote the development and blend of optoelectronic devices and MEMS.