Capacitance–Voltage ( C – V ) Characterization of Graphene–Silicon Heterojunction Photodiodes-Reference-Cited by-同舟云学术

Capacitance–Voltage ( C – V ) Characterization of Graphene–Silicon Heterojunction Photodiodes

Published:2020-05-07 Issue:13 Volume:8 Page:2000169
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Riazimehr Sarah¹,Belete Melkamu¹,Kataria Satender¹^ORCID,Engström Olof²,Lemme Max Christian¹²^ORCID

Affiliation:

1. RWTH Aachen UniversityChair of Electronic Devices, Faculty of Electrical Engineering and Information Technology Otto‐Blumenthal‐Str. 2 Aachen 52074 Germany

2. AMO GmbHAdvanced Microelectronic Center Aachen (AMICA) Otto‐Blumenthal‐Str. 25 Aachen 52074 Germany

Funder

European Commission

Bundesministerium für Bildung und Frauen

H2020 Future and Emerging Technologies

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202000169

Reference39 articles.

1. Chemically Modulated Graphene Diodes

2. A Review on Graphene-Based Gas/Vapor Sensors with Unique Properties and Potential Applications

3. Graphene-based ultrafast diode

4. Solar Cells: Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects (Adv. Mater. 42/2015)

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